C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE
Sadahiro Kato, Yoshihiro Satoh, Hitoshi Sasaki, Iwami Masayuki, Seikoh YoshidaVolume:
298
Year:
2007
Language:
english
Pages:
4
DOI:
10.1016/j.jcrysgro.2006.10.192
File:
PDF, 271 KB
english, 2007