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Erratum to “Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC”: [J. Crystal Growth 289 (2006) 520–526]
S.A. Sakwe, R. Müller, P.J. WellmannVolume:
299
Year:
2007
Language:
english
DOI:
10.1016/j.jcrysgro.2006.10.196
File:
PDF, 73 KB
english, 2007