Influence of growth interruption and Si doping on the structural and optical properties of AlxGaN/AlN (x>0.5) multiple quantum wells
Da-Bing Li, Masakazu Aoki, Takuya Katsuno, Hideto Miyake, Kazumasa Hiramatsu, Tomohiko ShibataVolume:
298
Year:
2007
Language:
english
Pages:
4
DOI:
10.1016/j.jcrysgro.2006.10.197
File:
PDF, 242 KB
english, 2007