![](/img/cover-not-exists.png)
Mechanism of n-doping of silicon carbide epitaxial films
A. Fiorucci, D. Moscatelli, M. MasiVolume:
303
Year:
2007
Language:
english
Pages:
4
DOI:
10.1016/j.jcrysgro.2006.11.193
File:
PDF, 263 KB
english, 2007