High current density and high PVCR Si/Si1−xGex DQW RTD...

High current density and high PVCR Si/Si1−xGex DQW RTD formed with quadruple-layer buffer

Hirotaka Maekawa, Yoshihiro Sano, Chihiro Ueno, Yoshiyuki Suda
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Volume:
301-302
Year:
2007
Language:
english
Pages:
4
DOI:
10.1016/j.jcrysgro.2006.11.269
File:
PDF, 362 KB
english, 2007
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