Selective epitaxial growth of AlN and GaN nanostructures on Si(1 1 1) by using NH3 as nitrogen source
S. Vézian, A. Le Louarn, J. MassiesVolume:
303
Year:
2007
Language:
english
Pages:
8
DOI:
10.1016/j.jcrysgro.2007.01.007
File:
PDF, 842 KB
english, 2007