Dislocations in III-nitride films grown on 4H-SiC mesas...

Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps

N.D. Bassim, M.E. Twigg, M.A. Mastro, C.R. Eddy Jr., T.J. Zega, R.L. Henry, J.C. Culbertson, R.T. Holm, P. Neudeck, J.A. Powell, A.J. Trunek
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Volume:
304
Year:
2007
Language:
english
Pages:
5
DOI:
10.1016/j.jcrysgro.2007.02.007
File:
PDF, 549 KB
english, 2007
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