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Investigation of defect formation in 4H-SiC epitaxial growth by X-ray topography and defect selective etching
H. Tsuchida, I. Kamata, M. NaganoVolume:
306
Year:
2007
Language:
english
Pages:
8
DOI:
10.1016/j.jcrysgro.2007.05.006
File:
PDF, 1.67 MB
english, 2007