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Growth of dislocation-free GaN islands on Si(1 1 1) using a scandium nitride buffer layer
M.A. Moram, M.J. Kappers, T.B. Joyce, P.R. Chalker, Z.H. Barber, C.J. HumphreysVolume:
308
Year:
2007
Language:
english
Pages:
7
DOI:
10.1016/j.jcrysgro.2007.09.009
File:
PDF, 1.03 MB
english, 2007