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AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination
Y. Cordier, M. Azize, N. Baron, S. Chenot, O. Tottereau, J. MassiesVolume:
309
Year:
2007
Language:
english
Pages:
7
DOI:
10.1016/j.jcrysgro.2007.09.023
File:
PDF, 585 KB
english, 2007