Defect distribution in boron-reduced GaAs crystals grown by...

Journal of Crystal Growth 2008 Vol. 310; Iss. 7-9

Defect distribution in boron-reduced GaAs crystals grown by vapour-pressure-controlled Czochralski technique

F.-M. Kiessling, M. Albrecht, K. Irmscher, R. Krause-Rehberg, W. Ulrici, P. Rudolph
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Volume:
310
Year:
2008
Language:
english
Pages:
6
DOI:
10.1016/j.jcrysgro.2007.11.040
File:
PDF, 498 KB
english, 2008
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