Determination of dislocation density in MOVPE grown GaN...

Journal of Crystal Growth 2008 Vol. 310; Iss. 5

Determination of dislocation density in MOVPE grown GaN layers using KOH defect etching

Peter J. Wellmann, Sakwe A. Sakwe, Felix Oehlschläger, Veit Hoffmann, Ute Zeimer, Arne Knauer
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Volume:
310
Year:
2008
Language:
english
Pages:
4
DOI:
10.1016/j.jcrysgro.2007.11.064
File:
PDF, 652 KB
english, 2008
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