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Lattice parameters of bulk GaN fabricated by halide vapor phase epitaxy
V. Darakchieva, B. Monemar, A. Usui, M. Saenger, M. SchubertVolume:
310
Year:
2008
Language:
english
Pages:
7
DOI:
10.1016/j.jcrysgro.2007.11.130
File:
PDF, 496 KB
english, 2008