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InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition
T. Pinnington, D.D. Koleske, J.M. Zahler, C. Ladous, Y.-B. Park, M.H. Crawford, M. Banas, G. Thaler, M.J. Russell, S.M. Olson, Harry A. AtwaterVolume:
310
Year:
2008
Language:
english
Pages:
6
DOI:
10.1016/j.jcrysgro.2008.01.022
File:
PDF, 497 KB
english, 2008