Formation of edge misfit dislocations in GexSi1−x (x∼0.4–0.5) films grown on misoriented (0 0 1)→(1 1 1) Si substrates
Yu.B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii, L.V. SokolovVolume:
310
Year:
2008
Language:
english
Pages:
6
DOI:
10.1016/j.jcrysgro.2008.05.002
File:
PDF, 1.61 MB
english, 2008