Growth Mechanism of GaAs during Migration-Enhanced Epitaxy...

Japanese Journal of Applied Physics 1989 / 2 Vol. 28; Iss. Part 1, No

Growth Mechanism of GaAs during Migration-Enhanced Epitaxy at Low Growth Temperatures

Horikoshi, Yoshiji, Kawashima, Minoru
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Volume:
28
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.28.200
Date:
February, 1989
File:
PDF, 1.26 MB
1989
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