Picosecond Characterization of InGaAs/InAlAs Resonant Tunneling Barrier Diode by Electro-Optic Sampling
Tackeuchi, Atsushi, Inata, Tsuguo, Muto, Shunichi, Miyauchi, EizoVolume:
28
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.28.L750
Date:
May, 1989
File:
PDF, 549 KB
1989