Lateral Growth of GaAs over SiO 2...

Japanese Journal of Applied Physics 1989 / 4 Vol. 28; Iss. Part 1, No

Lateral Growth of GaAs over SiO 2 Films Prepared on (111)B Substrates by Metalorganic Chemical Vapor Deposition

Yamaguchi, Ko-ichi, Okamoto, Kotaro
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Volume:
28
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.28.685
Date:
April, 1989
File:
PDF, 994 KB
1989
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