Buried Heterostructure GaAs/GaAlAs Distributed Bragg...

Japanese Journal of Applied Physics 1989 / 4 Vol. 28; Iss. Part 2, No

Buried Heterostructure GaAs/GaAlAs Distributed Bragg Reflector Surface Emitting Laser with Very Low Threshold (5.2 mA) under Room Temperature CW Conditions

Ibaraki, Akira, Kawashima, Kenji, Furusawa, Kohtaro, Ishikawa, Tohru, Yamaguchi, Takao, Niina, Tatsuhiko
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Volume:
28
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.28.L667
Date:
April, 1989
File:
PDF, 254 KB
1989
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