Characteristics of in-situ phosphorus-doped silicon selective epitaxial growth at atmospheric pressure
Tetsuya Ikuta, Shigeru Fujita, Hayato Iwamoto, Shingo Kadomura, Takayoshi Shimura, Heiji Watanabe, Kiyoshi YasutakeVolume:
310
Year:
2008
Language:
english
Pages:
4
DOI:
10.1016/j.jcrysgro.2008.08.010
File:
PDF, 459 KB
english, 2008