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Impurity Doping Effect on the Dislocation Density in GaAs on Si (100) Grown by Migration-Enhanced Epitaxy
Nozawa, Kazuhiko, Horikoshi, YoshijiVolume:
28
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.28.l1877
Date:
November, 1989
File:
PDF, 689 KB
1989