GaAs(001) Epitaxial Layer on SOS Using a Specifically...

Japanese Journal of Applied Physics 1989 / 10 Vol. 28; Iss. Part 2, No

GaAs(001) Epitaxial Layer on SOS Using a Specifically Designed MOCVD System

Nishimura, Takashi, Kadoiwa, Kaoru, Hayafuji, Norio, Murotani, Toshio, Ibuki, Sumiaki
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Volume:
28
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.28.L1696
Date:
October, 1989
File:
PDF, 773 KB
1989
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