Resonant Tunneling Characteristic in InGaAs/InAlAs MQW...

Japanese Journal of Applied Physics 1989 / 7 Vol. 28; Iss. Part 2, No

Resonant Tunneling Characteristic in InGaAs/InAlAs MQW Diodes with Si-Doped Quantum Wells

Kawamura, Yuichi, Asai, Hiromitsu, Wakita, Koichi, Mikami, Osamu, Naganuma, Mitsuru
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Volume:
28
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.28.L1104
Date:
July, 1989
File:
PDF, 685 KB
1989
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