Molecular Beam Epitaxial Growth of In x...

Japanese Journal of Applied Physics 1989 / 7 Vol. 28; Iss. Part 1, No

Molecular Beam Epitaxial Growth of In x Ga 1- x As and In x Al 1- x As on Si Substrates

Fukunaga, Toshiaki, Hashimoto, Akihiro, Watanabe, Nozomu
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
28
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.28.1276
Date:
July, 1989
File:
PDF, 732 KB
1989
Conversion to is in progress
Conversion to is failed