Silicon and Selenium Doping Effects on Band-Gap Energy and...

Japanese Journal of Applied Physics 1989 / 8 Vol. 28; Iss. Part 2, No

Silicon and Selenium Doping Effects on Band-Gap Energy and Sublattice Ordering in Ga 0.5 In 0.5 P Grown by Metalorganic Vapor Phase Epitaxy

Gomyo, Akiko, Hotta, Hitoshi, Hino, Isao, Kawata, Seiji, Kobayashi, Kenichi, Suzuki, Tohru
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Volume:
28
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.28.l1330
Date:
August, 1989
File:
PDF, 982 KB
1989
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