A New Method for Atomic-Layer-Controlled Molecular Beam...

Japanese Journal of Applied Physics 1989 / 8 Vol. 28; Iss. Part 2, No

A New Method for Atomic-Layer-Controlled Molecular Beam Epitaxy of GaAs Exploiting the Desorption of the Excess Ga Atoms

Sugiyama, Nao-haru, Isu, Toshiro, Kamijoh, Takeshi, Kajikawa, Yasutomo, Katayama, Yoshifumi
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Volume:
28
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.28.L1446
Date:
August, 1989
File:
PDF, 434 KB
1989
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