Surface Migration of Ga and Al Atoms on (100) GaAs and AlAs...

Japanese Journal of Applied Physics 1989 / 8 Vol. 28; Iss. Part 1, No

Surface Migration of Ga and Al Atoms on (100) GaAs and AlAs during Migration-Enhanced Epitaxy

Horikoshi, Yoshiji, Yamaguchi, Hiroshi, Kawashima, Minoru
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Volume:
28
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.28.1307
Date:
August, 1989
File:
PDF, 872 KB
1989
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