InP Grown on Si Substrates with GaP Buffer Layers by...

Japanese Journal of Applied Physics 1989 / 8 Vol. 28; Iss. Part 1, No

InP Grown on Si Substrates with GaP Buffer Layers by Metalorganic Chemical Vapor Deposition

Kohama, Yoshitaka, Kadota, Yoshiaki, Ohmachi, Yoshiro
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Volume:
28
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.28.1337
Date:
August, 1989
File:
PDF, 1.40 MB
1989
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