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Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition
Samantha C. Cruz, Stacia Keller, Thomas E. Mates, Umesh K. Mishra, Steven P. DenBaarsVolume:
311
Year:
2009
Language:
english
Pages:
7
DOI:
10.1016/j.jcrysgro.2009.02.051
File:
PDF, 706 KB
english, 2009