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Growth and characterization of GaAs layers on polished Ge/Si by selective aspect ratio trapping
J.Z. Li, J. Bai, J.M. Hydrick, J.S. Park, C. Major, M. Carroll, J.G. Fiorenza, A. LochtefeldVolume:
311
Year:
2009
Language:
english
Pages:
5
DOI:
10.1016/j.jcrysgro.2009.03.018
File:
PDF, 470 KB
english, 2009