AlN buffer layer growth for GaN epitaxy on (1 1 1) Si: Al or N first?
A. Le Louarn, S. Vézian, F. Semond, J. MassiesVolume:
311
Year:
2009
Language:
english
Pages:
7
DOI:
10.1016/j.jcrysgro.2009.04.001
File:
PDF, 486 KB
english, 2009