Fabrication of (1 1 1)-oriented Si layers...

Journal of Crystal Growth 2009 Vol. 311; Iss. 14

Fabrication of (1 1 1)-oriented Si layers on SiO2 substrates by an aluminum-induced crystallization method and subsequent growth of semiconducting BaSi2 layers for photovoltaic application

Dai Tsukada, Yuta Matsumoto, Ryo Sasaki, Michitoshi Takeishi, Takanobu Saito, Noritaka Usami, Takashi Suemasu
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Volume:
311
Year:
2009
Language:
english
Pages:
6
DOI:
10.1016/j.jcrysgro.2009.04.039
File:
PDF, 558 KB
english, 2009
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