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Effect of NH3 flow rate on m-plane GaN growth on m-plane SiC by metalorganic chemical vapor deposition
Qian Sun, Christopher D. Yerino, Yu Zhang, Yong Suk Cho, Soon-Yong Kwon, Bo Hyun Kong, Hyung Koun Cho, In-Hwan Lee, Jung HanVolume:
311
Year:
2009
Language:
english
Pages:
6
DOI:
10.1016/j.jcrysgro.2009.06.035
File:
PDF, 1017 KB
english, 2009