MOCVD growth of GaN on Si(1 1 1) substrates using an ALD-grown Al2O3 interlayer
William E. Fenwick, Nola Li, Tianming Xu, Andrew Melton, Shenjie Wang, Hongbo Yu, Christopher Summers, Muhammad Jamil, Ian T. FergusonVolume:
311
Year:
2009
Language:
english
Pages:
5
DOI:
10.1016/j.jcrysgro.2009.07.022
File:
PDF, 426 KB
english, 2009