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Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits
Brian R. Bennett, Mario G. Ancona, James G. Champlain, Nicolas A. Papanicolaou, J. Brad BoosVolume:
312
Year:
2009
Language:
english
Pages:
4
DOI:
10.1016/j.jcrysgro.2009.09.047
File:
PDF, 310 KB
english, 2009