Crystal growth of bulk ternary semiconductors: Comparison...

Crystal growth of bulk ternary semiconductors: Comparison of GaInSb growth by horizontal Bridgman and horizontal traveling heater method

Brent C. Houchens, Piotr Becla, Stephanie E. Tritchler, Andres J. Goza, David F. Bliss
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Volume:
312
Year:
2010
Language:
english
Pages:
5
DOI:
10.1016/j.jcrysgro.2009.12.051
File:
PDF, 335 KB
english, 2010
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