Generation mechanism of dislocations during directional...

Journal of Crystal Growth 2010 Vol. 312; Iss. 7

Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed

Isao Takahashi, Noritaka Usami, Kentaro Kutsukake, Gaute Stokkan, Kohei Morishita, Kazuo Nakajima
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Volume:
312
Year:
2010
Language:
english
Pages:
5
DOI:
10.1016/j.jcrysgro.2010.01.011
File:
PDF, 329 KB
english, 2010
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