The impact of an intermediate temperature buffer on the growth of GaN on an AlN template by hydride vapor phase epitaxy
Youngji Cho, Jun-Seok Ha, Mina Jung, Hyun-Jae Lee, Seunghwan Park, Jinsub Park, Katsushi Fujii, Ryuichi Toba, Samnyung Yi, Gyung-Suk Kil, Jiho Chang, Takafumi YaoVolume:
312
Year:
2010
Language:
english
Pages:
4
DOI:
10.1016/j.jcrysgro.2010.02.016
File:
PDF, 449 KB
english, 2010