Enhanced growth rates and reduced parasitic deposition by...

Journal of Crystal Growth 2010 Vol. 312; Iss. 18

Enhanced growth rates and reduced parasitic deposition by the substitution of Cl2 for HCl in GaN HVPE

Tim Bohnen, Hina Ashraf, Gerbe W.G. van Dreumel, Sjoerd Verhagen, Jan L. Weyher, Paul R. Hageman, Elias Vlieg
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Volume:
312
Year:
2010
Language:
english
Pages:
9
DOI:
10.1016/j.jcrysgro.2010.04.010
File:
PDF, 1.73 MB
english, 2010
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