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Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes
R.M. Farrell, D.A. Haeger, X. Chen, M. Iza, A. Hirai, K.M. Kelchner, K. Fujito, A. Chakraborty, S. Keller, S.P. DenBaars, J.S. Speck, S. NakamuraVolume:
313
Year:
2010
Language:
english
Pages:
7
DOI:
10.1016/j.jcrysgro.2010.08.060
File:
PDF, 1.22 MB
english, 2010