Unidirectional expansion of lattice parameters in GaN...

Chinese Physics B 2011 / 05 Vol. 20; Iss. 5

Unidirectional expansion of lattice parameters in GaN induced by ion implantation

Fa, Tao, Li, Lin, Yao, Shu-De, Wu, Ming-Fang, Zhou, Sheng-Qiang
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Volume:
20
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/20/5/056101
Date:
May, 2011
File:
PDF, 1.54 MB
english, 2011
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