Control of epilayer thickness during epitaxial growth of...

Journal of Crystal Growth 2011 Vol. 318; Iss. 1

Control of epilayer thickness during epitaxial growth of high Ge content strained Ge/SiGe multilayers by RP-CVD

M. Myronov, Xue-Chao Liu, A. Dobbie, D.R. Leadley
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Volume:
318
Year:
2011
Language:
english
Pages:
4
DOI:
10.1016/j.jcrysgro.2010.10.133
File:
PDF, 474 KB
english, 2011
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