Threading dislocations in n- and p-type 4H–SiC material...

Journal of Crystal Growth 2011 Vol. 314; Iss. 1

Threading dislocations in n- and p-type 4H–SiC material analyzed by etching and synchrotron X-ray topography

B. Kallinger, S. Polster, P. Berwian, J. Friedrich, G. Müller, A.N. Danilewsky, A. Wehrhahn, A.-D. Weber
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Volume:
314
Year:
2011
Language:
english
Pages:
9
DOI:
10.1016/j.jcrysgro.2010.10.145
File:
PDF, 1.16 MB
english, 2011
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