High-quality and large-area 3C–SiC growth on...

Journal of Crystal Growth 2011 Vol. 318; Iss. 1

High-quality and large-area 3C–SiC growth on 6H–SiC(0 0 0 1) seed crystal with top-seeded solution method

Toru Ujihara, Kazuaki Seki, Ryo Tanaka, Shigeta Kozawa, Alexander, Kai Morimoto, Katsuhiro Sasaki, Yoshikazu Takeda
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Volume:
318
Year:
2011
Language:
english
Pages:
5
DOI:
10.1016/j.jcrysgro.2010.10.148
File:
PDF, 693 KB
english, 2011
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