Defect structure of 4H silicon carbide ingots

Journal of Crystal Growth 2011 Vol. 318; Iss. 1

Defect structure of 4H silicon carbide ingots

A.O. Lebedev, D.D. Avrov, A.V. Bulatov, S.I. Dorozhkin, Yu.M. Tairov, A.Yu. Fadeev
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Volume:
318
Year:
2011
Language:
english
Pages:
3
DOI:
10.1016/j.jcrysgro.2010.10.166
File:
PDF, 415 KB
english, 2011
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