Silicon epitaxial growth process using trichlorosilane gas...

Journal of Crystal Growth 2011 Vol. 327; Iss. 1

Silicon epitaxial growth process using trichlorosilane gas in a single-wafer high-speed substrate rotation reactor

Hitoshi Habuka, JunPei Suzuki, Yusuke Takai, Hironobu Hirata, Shin-Ichi Mitani
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Volume:
327
Year:
2011
Language:
english
Pages:
5
DOI:
10.1016/j.jcrysgro.2011.05.006
File:
PDF, 416 KB
english, 2011
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