High-excitation luminescence properties of m-plane GaN...

High-excitation luminescence properties of m-plane GaN grown on LiAlO2 substrates

S. Miasojedovas, C. Mauder, S. Krotkus, A. Kadys, T. Malinauskas, K. Jarašiu¯nas, M. Heuken, H. Kalisch, A. Vescan
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Volume:
329
Year:
2011
Language:
english
Pages:
6
DOI:
10.1016/j.jcrysgro.2011.06.053
File:
PDF, 809 KB
english, 2011
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