GaInAs/InP PIN Photodiodes Fabricated by MOVPE and a New Zn...

Japanese Journal of Applied Physics 1990 / 3 Vol. 29; Iss. Part 2, No

GaInAs/InP PIN Photodiodes Fabricated by MOVPE and a New Zn Diffusion Technique

Wada, Morio, Seko, Mashahito, Sakakibara, Katsutoshi, Sekiguchi, Yoichi
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.29.l401
Date:
March, 1990
File:
PDF, 573 KB
1990
Conversion to is in progress
Conversion to is failed