Initial Stages of Epitaxial Growth of GaP on Si with AsH...

Japanese Journal of Applied Physics 1990 / 2 Vol. 29; Iss. Part 2, No

Initial Stages of Epitaxial Growth of GaP on Si with AsH 3 Preflow

Kohama, Yoshitaka, Kadota, Yoshiaki, Ohmachi, Yoshiro
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Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.L229
Date:
February, 1990
File:
PDF, 773 KB
1990
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