Initial Stages of GaAs MBE Growth on Si(111)($...

Japanese Journal of Applied Physics 1990 / 1 Vol. 29; Iss. Part 2, No

Initial Stages of GaAs MBE Growth on Si(111)($ \sqrt{3}{\times}\sqrt{3}$)-Ga Surfaces

Maehashi, Kenzo, Hasegawa, Shigehiko, Sato, Masamichi, Nakashima, Hisao
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Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.29.l13
Date:
January, 1990
File:
PDF, 736 KB
1990
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